Factory Lead Time  

17 Weeks

Package / Case  

8-PowerTDFN

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

8

Transistor Element Material  

SILICON

Power Dissipation (Max)  

2.3W Ta

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1.4V @ 250μA

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

2.5V 10V

Current - Continuous Drain (Id) @ 25℃  

60A Tc

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

Published  

2015

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

5

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

HIGH RELIABILITY

Terminal Position  

DUAL

Terminal Form  

FLAT

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Reference Standard  

AEC-Q101

JESD-30 Code  

R-PDSO-F5

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.9m Ω @ 25A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

12826pF @ 10V

Gate Charge (Qg) (Max) @ Vgs  

585nC @ 10V

Drain to Source Voltage (Vdss)  

20V

Vgs (Max)  

±12V

Continuous Drain Current (ID)  

60A

Drain-source On Resistance-Max  

0.0019Ohm

Pulsed Drain Current-Max (IDM)  

100A

DS Breakdown Voltage-Min  

20V

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant